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Structural, Optical and Electronic Properties of Hydrogenated Amorphous Silicon Thin Films

Author Affiliations

  • 1Department of P.G. Studies and Research in Physics, J.V. Jain College, Saharanpur, India
  • 2Department of P.G. Studies and Research in Physics, J.V. Jain College, Saharanpur, India
  • 3Department of Physics, M.M. College, Modinagar, India

Res. J. Recent Sci., Volume 5, Issue (ISC-2015), Pages 115-120, -----Select----,2 (2016)


In the present research paper of hydrogenated amorphous silicon thin films have been deposited by plasma enhanced chemical vapour deposition (PECVD) technique. Normally device quality Hydrogenated amorphous silicon (a-Si:H) films are deposited at very low power but our aim is to deposit this thin films at high growth rate by applying high power density to cathode. The influence of the nature of the high growth rate on the structural, optical and electronic properties of the Hydrogenated amorphous silicon (a-Si:H) films has been studied. Structural properties were investigated by using x-ray diffraction and atomic force microscope, optical ones by using a UV–visible spectrophotometer and electronic properties by means of dc four-probe resistivity measurements. The refractive index, extension coefficient, energy band gap with various thickness of thin film is investigated using Manificier method.


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