OFET Transistor with Polyvinyl chloride/ NiO Nano Composite
Author Affiliations
- 1 Department of Physics, University of Mazandaran, Babolsar, 4741695447, IRAN
Res. J. Recent Sci., Volume 4, Issue (4), Pages 23-27, April,2 (2015)
Abstract
We have tried to study the electrical and nanostructural properties of polymer-based materials in corporation NiO (Nickel oxide) in concentrations of 0.2%, 0.4% and 0.8% by weight of PVC (polyvinylchloride) polymer, in NiO/PVC nano composite with using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) techniques. The contact point of NiO/ PVC is of importance due to its ohmic and Schottky contacts. The obtained results indicated that the NiO/PVC sample with 5 g NiO and 0.02g PVC (equivalence to 0.4 % PVC) in weight synthesis at 80C temperature has higher dielectric constant, better morphology, less roughness surface, less leakage current, and thus has the potential to be succeeded as a good gate dielectric material for the future of OFET (Organic Field Effect Transistor) devices.
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