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Electrical and Structural Properties of WO3-SnO2 Thick-Film resistors Prepared by Screen Printing Technique

Author Affiliations

    Res. J. Recent Sci., Volume 4, Issue (1), Pages 55-61, January,2 (2015)


    WO3-SnO2 based thick films were prepared by using standard screen printing technique. The films were fired at optimized temperature of 600°C for 30 minutes in air atmosphere. The material characterization was performed by XRD, SEM, and EDAX for elemental analysis. The UV-visible spectra show WO3-SnO2 exhibits a shoulder at 232 nm along with an ill-defined band at 260 nm. The maximum optical band gap energy of 5.12 eV was obtained on a room temperature. The D.C. resistance of the films was measured by half bridge method in air atmosphere at different temperatures. The films were showing decrease in resistance with increase in temperature indicating semiconductor behaviour. The temperature coefficient of resistance (TCR), activation energy and sheet resistivity are evaluated at 600°C.


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