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Electronic Properties of Ternary Compound Semiconductors

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Author Affiliations

  • 1School of Applied Sciences and Social Sciences, Singhania University, Jhunjhunu, INDIA
  • 2 Department of Physics, Shyam Lal College, Delhi University, Delhi, INDIA
  • 3 Department of Physics, Ganjdundwara (P.G.) College, Ganjdundwara, INDIA
  • 4 Department of Physics, Panjab University, Chandigarh, INDIA

Res. J. Recent Sci., Volume 1, Issue (8), Pages 64-66, August,2 (2012)

Abstract

The description of crystal ionicity developed by Phillips and Van Vechten has been successfully employed in a wide range of semi-conductors and insulators. However, the applicability of this Phillips and Van Vechten (PV) dielectric analysis has been limited to only the simple ANB8-N compounds, which contain only one type of bond. Levine has extended the theory of PV to multi bond and complex crystals. Levine’s theory of ionicity has been used to calculate the various bond parameters for the chalcopyrites. In this paper a simple method based on the high frequency dielectric constants of solids, is proposed for the calculation of crystal ionicity (fi) of chalcopyrite (AIBIIC2VI and AIIBIVC2V) semiconductors. Our evaluated values are in excellent agreement with the values reported by different researchers.

References

  1. Merad A.E., Kanoun M.B., Merad G., Cibert J. and Aourag H., Full-potential investigation of the electronic and optical properties of stressed CdTe and ZnTe, Materials Chemistry and Physics, 92, 333-339 (2005)
  2. Wang S.Q. and Ye H.Q., A plane-wave pseudopotential study on III–V zinc-blende and wurtzite semiconductors under pressure, J. Phys. Condens. Matter, 14, 9579-9587 (2002)
  3. Wang S.Q. and Ye H.Q., Ab initio elastic constants for the lonsdaleite phases of C, Si and Ge, J. Phys. Condens. Matter, 15, 5307-5314 (2003)
  4. Wang S.Q. and Ye H.Q., First-principles study on the lonsdaleite phases of C, Si and Ge, J. Phys. Condens. Matter, 15, L197-L202 (2003)
  5. Wang S.Q. and Ye H.Q., Ab initio investigation of the pressure dependences of phonon and dielectric properties for III–V semiconductors, J. Phys. Condens. Matter, 17,4475-4488 (2005)
  6. Guezmir N., Ouerfelli J. and Belgacem S., Optical properties of sprayed CuInS thin layers, Materials Chemistry and Physics, 96, 116-123 (2006)
  7. Wang S.Q. and Ye H.Q., First-principles study on elastic properties and phase stability of III–V compounds, Phys. Status Solidi (b), 240, 45-54 (2003)
  8. Alonso M.I., Wakita K., Pascual J. and Yamamoto N., Optical functions and electronic structure of CuInSe, CuGaSe, CuInS, and CuGaS, Phys. Rev., 63, 75203(13) (2001)
  9. Jiang X. and Lambrecht W.R.L., Electronic band structure of ordered vacancy defect chalcopyrite compounds with formula II-III-VI, Phys. Rev. B, 69, 035201(8), (2004)
  10. Kumar V. and Sastry B.S.R., Heat of formation of ternary chalcopyrite semiconductors, J. Phys. Chem. Solids, 66, 99-102 (2005)
  11. Kanoun M.B., Goumri-Said S., Merad A.E., Merad G., Cibert J. and Aourag H., Zinc-blende AlN and GaN under pressure: structural, electronic, elastic and piezoelectric properties, Semicond. Sci. Technol., 19, 1220-1231 (2004)
  12. Tutuncu H.M., Bagci S., Srivastava G.P., Albudak A.T. and Ugur G., Structural and dynamical properties of zinc-blende GaN, AlN, BN, and their (110) surfaces, Phys. Rev. , 71, 195309(10) (2005)
  13. Levine B.F., -Electron Effects on Bond susceptibilities and Ionicities, Phys. Rev. B, , 2591-2600 (1973)
  14. Phillips J.C., Bonds and Bands in Semiconductors, Academic Press, New York (1973)
  15. Phillips J.C. and Van Vechten J.A., Spectroscopic Analysis of Cohesive Energies and Heats of Formation of Tetrahedrally Coordinated Semiconductors, Phys. Rev. B, 2, 2147-2160 (1970)
  16. Van Vechten J.A., Electronic Structures of Semiconductor Alloys, Phys. Rev. B,1, 3351-3358 (1970)
  17. Penn D.R., Wave-Number-Dependent Dielectric Function of Semiconductors, Phys. Rev.,128, 2093-2097 (1962)
  18. Sarode P.R., Correlation between the Chemical Shifts in X-Ray Absorption Spectra of Ionic Solids and Contribution to the Chemical Bond, Phys. Status Solidi (b), 88, k35-k38 (1978)
  19. Garcia A. and Cohen M.L., First-principles ionicity scales, I. Charge asymmetry in the solid state, Phys. Rev. B, 47, 4215-4220 (1993)
  20. Ferhat M., Zaoui A., Certier M. and Khelifa B., Empirical tight-binding band structure of zinc-blende nitrides GaN, AIN, and BN, Phys. Status Solidi (b), 195, 415-424 (1996)
  21. Sharma A.C. and Auluck S., Model study of the frequency-dependent dielectric properties of semiconductors, Phys. Rev. B, 28, 965-970 (1983)
  22. Tubb M.R., A Spectroscopic Interpretation of Crystalline Ionicity, Phys. Stat. Sol., 41, k61-k64 (1970)
  23. Kumar V., Bond ionicity and susceptibility in aIIIVIcompounds, J. Phys. Chem. Solids, 48, 827-831 (1987)
  24. Kumar V., Ionicity in IIIV semiconductors, Phys. Rev. B, 36, 5044-5046 (1987)
  25. Srivastava V.K., Homopolar and heteropolar energy gaps in zincblende crystals, J. Phys. C: Solid State Phys., 19,5689-5694 (1986)
  26. Verma A.S., Singh R.K. and Rathi S.K., An empirical model for dielectric constant and electronic polarizability of binary (A8 ) and ternary (A2+7 ) tetrahedral semiconductors, J. Alloys and Compounds, 486, 795-800 (2009)
  27. Verma A.S. and Bhardwaj S.R., Electronic and optical properties of zinc blende and complex crystal structured solids, Physica Status Solidi B, 243, 4025-4034 (2006)