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Uniaxial Growth and Characterization studies of [(para methoxy phenyl) imino] benzene NLO crystal by Sankaranarayanan-RamasamyMethod

Author Affiliations

  • 1Department of Physics, St. Xavier’s College (Autonomous), Palayamkottai – 627002, INDIA

Res. J. Recent Sci., Volume 1, Issue (10), Pages 37-44, October,2 (2012)

Abstract

Optically transparent bulk single crystal of [(para methoxy) phenyl] imino benzene (PMPIB) has been grown along <013>plane using the uniaxial crystal growth method of Sankaranarayanan-Ramasamy with a new modification in the growth assembly. The crystal was grown with a growth rate of 6mm/day upto a dimension of 60 X 30 X 10 mm and within a period of 10 days having a cylindrical morphology. Single crystal XRD analysis confirms that the growth ingot belongs to the orthorhombic crystal system with a space group of P212121. The crystalline perfection was assessed by XRPD analysis. The powder diffraction pattern of the grown crystal has been indexed. The presence of C=N bond with intramolecular hydrogen bonding on the protonation of ions were confirmed by FTIR analysis. The UV-vis-NIR spectrum of the crystal shows that the crystal has cut-off wavelength at 200 nm. The 1H1and 13NMR spectra confirms the molecular structure. The existence of second harmonic generation (SHG) signal was observed by using ND:YAG laser with the fundamental wavelength of 1064 nm. The Laser damage threshold of PMPIB was found to be 0.57 GW/cm2 and hence PMPIB can be used in frequency doubler system. The photoconductivity study of PMPIB revealed negative photoconductivity of the sample.

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