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Growth and Dielectric Properties of SnSe0.5Te0.5 Crystals

Author Affiliations

  • 1Department of Physics, Sardar Patel University, Vallabh Vidyanagar 388 120, Gujarat, INDIA
  • 2 Faculty of Technology, Marwadi Education Foundations Group of Institutions Rajkot, Gujarat, INDIA

Res.J.chem.sci., Volume 2, Issue (10), Pages 43-48, October,18 (2012)


The present paper reports the growth of SnSe0.5Te0.5 single crystals by direct vapor transport technique (DVT) using two zone horizontal furnace. Detailed growth parameters for these crystals are reported here like temperature profile, ampoules dimension and furnace dimension etc. The as grown crystals were used for dielectric measurements in the frequency range 200 Hz to 1 MHz using LCR meter model HP 4284A in temperature range 303 K to 523 K at applied magnetic field of 1 kG, 2 kG and 3 kG. The dielectric properties i.e. capacitance (C), alternating current conductivity (σac), dielectric constant (ε’), dielectric loss tan and imaginary dielectric constant (ε’’) are measured and represented as a function of frequency and temperature.


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