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Transport Phenomena in Semiconductor Quantum Devendrawells

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Author Affiliations

  • 1Physics Department, Gurukul Kangri Vishwavidyalaya, Haridwar-249404, Uttarakhand, INDIA
  • 2 Physics Department, Texas A and M University, Education City, Doha-23874, QATAR
  • 3 Physics Department, Indian Institute of Technology, Roorkee-247667, Uttarakhand, INDIA

Res. J. Physical Sci., Volume 1, Issue (4), Pages 28-31, May,4 (2013)

Abstract

The problem of heat transport in quantum well structures is investigated with the help of newer concept of equivalence of relaxation times and phonon line width (i.e., a phonon life time). Thevarious contribution of scattering mechanism in nanostructure has been described by taking theelectron-phonon, disorder and anharmonicity effects as a central problem. This has been dealt with thehelp of double time thermodynamic Green's function theory for phonon via a newly formulated Hamiltonian which consists of the contribution from i. unperturbed electrons, ii. unperturbed phonons, iii. isotopic impurities and iv. anharmonicities and v. electron-phonon. In the present work the phonon frequency line width is observed as a very sensitive quantity to study the transport phenomena in quantum well structure.

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