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A Comparative Analysis of Transimpedance Amplifier in Giga-bit Optical Communication

Author Affiliations

  • 1 Dept. of Electrical Engineering, School of Engineering, Shiv Nadar University, Gautam Budh Nagar, INDIA

Res. J. Engineering Sci., Volume 3, Issue (3), Pages 6-9, March,26 (2014)


In this paper a comparative analysis of transimpedance amplifiers in three different technologies, 0.8 Ám BICMOS, 2.5 GHz BJT and 0.8 Ám CMOS has been presented. Based on their standard device parameters such as gain, bandwidth and noise density the corresponding characteristics such as RF spectrum, Output Power, time domain analysis, Bit error response and Eye diagram were analysed. The core of this analysis has been the receiver part of the optical communication in which the output of the photodiode is applied as an input to the transimpedance amplifier. All the characteristics presented here have thus been measured at the output of the Transimpedance amplifier. All the simulations presented here in this paper have been simulated using OptiSystem 11.0.


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